Indium content, doping and thickness related impacts on nonpolar (In,Ga)N solar cell performance: Numerical investigation
Küçük Resim Yok
Tarih
2023
Yazarlar
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Pergamon-Elsevier Science Ltd
Erişim Hakkı
info:eu-repo/semantics/closedAccess
Özet
Analytical model to evaluate the photovoltaic performance via the short circuit current density, open circuit voltage, fill factor, and efficiency of nonpolar (In,Ga)N solar cells at room temperature is conducted via this paper. The Indium content and structure thickness including the doping concentration impacts are assessed to obtain the optimum values that yield high efficiencies. The band gap energy, reverse saturation current density, and carrier mobility are the important factors that govern how the solar cell performance characteristics change with the adjusted parameters. The solar cell characteristics are calculated for American Society for testing and Materials experimental data related to 1-sun AM1.5D, AM1.5G, and AM0 spectra. A high quality In0.42Ga0.58N (1.42eV) solar cell with a 3 mu m thickness, 10(17)cm(- 3) doping concentration and reflection coefficient of about 15% can display as optimum efficiency as 25.43%, 25.16% and 22.87% under respectively 1-sun AM1.5G, AM1.5D and AM0 illuminations. The optimum AM1.5G related photovoltaic conversion efficiency is reached for FF = 89.2%, V-oc = 1.12V and Jsc = 28.63 mA.cm(-2).
Açıklama
Anahtar Kelimeler
Solar Cell, (In,Ga)N, Indium, Doping, Performance
Kaynak
Solid State Communications
WoS Q Değeri
Scopus Q Değeri
Q2
Cilt
373
