Indium content, doping and thickness related impacts on nonpolar (In,Ga)N solar cell performance: Numerical investigation

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dc.contributor.authorEl Ghazi, Haddou
dc.contributor.authorRamazan, Yasin Ecker
dc.date.accessioned2024-02-23T14:16:19Z
dc.date.available2024-02-23T14:16:19Z
dc.date.issued2023
dc.departmentNEÜen_US
dc.description.abstractAnalytical model to evaluate the photovoltaic performance via the short circuit current density, open circuit voltage, fill factor, and efficiency of nonpolar (In,Ga)N solar cells at room temperature is conducted via this paper. The Indium content and structure thickness including the doping concentration impacts are assessed to obtain the optimum values that yield high efficiencies. The band gap energy, reverse saturation current density, and carrier mobility are the important factors that govern how the solar cell performance characteristics change with the adjusted parameters. The solar cell characteristics are calculated for American Society for testing and Materials experimental data related to 1-sun AM1.5D, AM1.5G, and AM0 spectra. A high quality In0.42Ga0.58N (1.42eV) solar cell with a 3 mu m thickness, 10(17)cm(- 3) doping concentration and reflection coefficient of about 15% can display as optimum efficiency as 25.43%, 25.16% and 22.87% under respectively 1-sun AM1.5G, AM1.5D and AM0 illuminations. The optimum AM1.5G related photovoltaic conversion efficiency is reached for FF = 89.2%, V-oc = 1.12V and Jsc = 28.63 mA.cm(-2).en_US
dc.description.sponsorshipNational Center for Scientific and Technical Research (CNRST: Morocco); Scientific and Technological Research Institution (TUEBIyTAK: Turkey)en_US
dc.description.sponsorshipWe gratefully acknowledge the financial support from National Center for Scientific and Technical Research (CNRST: Morocco) and Scientific and Technological Research Institution (TUEBIyTAK: Turkey) within the bilateral project CNRST/TUEBIyTAK for the 2023-2025 period.en_US
dc.identifier.doi10.1016/j.ssc.2023.115341
dc.identifier.issn0038-1098
dc.identifier.issn1879-2766
dc.identifier.scopus2-s2.0-85172695359en_US
dc.identifier.scopusqualityQ2en_US
dc.identifier.urihttps://doi.org/10.1016/j.ssc.2023.115341
dc.identifier.urihttps://hdl.handle.net/20.500.12452/12621
dc.identifier.volume373en_US
dc.identifier.wosWOS:001086181900001en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherPergamon-Elsevier Science Ltden_US
dc.relation.ispartofSolid State Communicationsen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectSolar Cellen_US
dc.subject(In,Ga)Nen_US
dc.subjectIndiumen_US
dc.subjectDopingen_US
dc.subjectPerformanceen_US
dc.titleIndium content, doping and thickness related impacts on nonpolar (In,Ga)N solar cell performance: Numerical investigationen_US
dc.typeArticleen_US

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