Thermionic Emission of Atomic Layer Deposited MoO3/Si UV Photodetectors

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dc.contributor.authorBasyooni, Mohamed A.
dc.contributor.authorGaballah, A. E. H.
dc.contributor.authorTihtih, Mohammed
dc.contributor.authorDerkaoui, Issam
dc.contributor.authorZaki, Shrouk E.
dc.contributor.authorEker, Yasin Ramazan
dc.contributor.authorAtes, Sule
dc.date.accessioned2024-02-23T14:35:12Z
dc.date.available2024-02-23T14:35:12Z
dc.date.issued2023
dc.departmentNEÜen_US
dc.description.abstractUltrathin MoO3 semiconductor nanostructures have garnered significant interest as a promising nanomaterial for transparent nano- and optoelectronics, owing to their exceptional reactivity. Due to the shortage of knowledge about the electronic and optoelectronic properties of MoO3/n-Si via an ALD system of few nanometers, we utilized the preparation of an ultrathin MoO3 film at temperatures of 100, 150, 200, and 250 degrees C. The effect of the depositing temperatures on using bis(tbutylimido)bis(dimethylamino)molybdenum (VI) as a molybdenum source for highly stable UV photodetectors were reported. The ON-OFF and the photodetector dynamic behaviors of these samples under different applied voltages of 0, 0.5, 1, 2, 3, 4, and 5 V were collected. This study shows that the ultrasmooth and homogenous films of less than a 0.30 nm roughness deposited at 200 degrees C were used efficiently for high-performance UV photodetector behaviors with a high sheet carrier concentration of 7.6 x 10(10) cm(-2) and external quantum efficiency of 1.72 x 10(11). The electronic parameters were analyzed based on thermionic emission theory, where Cheung and Nord's methods were utilized to determine the photodetector electronic parameters, such as the ideality factor (n), barrier height (f(0)), and series resistance (R-s). The n-factor values were higher in the low voltage region of the I-V diagram, potentially due to series resistance causing a voltage drop across the interfacial thin film and charge accumulation at the interface states between the MoO3 and Si surfaces.en_US
dc.description.sponsorshipScientific Research Projects Coordination (BAP) Unit at Selcuk University [22211012]en_US
dc.description.sponsorshipI would like to express my sincere gratitude to the Scientific Research Projects Coordination (BAP) Unit at Selcuk University for their invaluable support of our project with identification number 22211012.en_US
dc.identifier.doi10.3390/ma16072766
dc.identifier.issn1996-1944
dc.identifier.issue7en_US
dc.identifier.pmid37049060en_US
dc.identifier.scopus2-s2.0-85152937846en_US
dc.identifier.urihttps://doi.org/10.3390/ma16072766
dc.identifier.urihttps://hdl.handle.net/20.500.12452/15926
dc.identifier.volume16en_US
dc.identifier.wosWOS:000969969100001en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.indekslendigikaynakPubMeden_US
dc.language.isoenen_US
dc.publisherMdpien_US
dc.relation.ispartofMaterialsen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/openAccessen_US
dc.subjectMoo3en_US
dc.subjectElectric And Optoelectronicsen_US
dc.subjectUltrathin Filmsen_US
dc.subjectThermionic Emissionen_US
dc.subjectUv Illuminationsen_US
dc.titleThermionic Emission of Atomic Layer Deposited MoO3/Si UV Photodetectorsen_US
dc.typeArticleen_US

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