Dielectric characterization of Al/PCBM:ZnO/p-Si structures for wide-range frequency
dc.contributor.author | Yildiz, Dilber Esra | |
dc.contributor.author | Kocyigit, Adem | |
dc.contributor.author | Erdal, Mehmet Okan | |
dc.contributor.author | Yildirim, Murat | |
dc.date.accessioned | 2024-02-23T13:59:47Z | |
dc.date.available | 2024-02-23T13:59:47Z | |
dc.date.issued | 2021 | |
dc.department | NEÜ | en_US |
dc.description.abstract | The dielectric properties of the Al/PCBM:ZnO/p-Si structure were investigated using the impedance spectroscopy technique. PCBM:ZnO layer was obtained by spin coating method on the p-Si. The morphological properties of the PCBM:ZnO were investigated using atomic force microscopy. The results highlighted that PCBM:ZnO thin film has uniform surfaces. The dielectric parameters such as real and imaginary parts of the electric modulus (M ' and M '') and ac electrical conductivity (sigma), dielectric constant (epsilon '), dielectric loss (epsilon ''), loss tangent (tan delta) values were determined. The results of the dielectric properties of the Al/PCBM:ZnO/p-Si structures impressed voltage and frequency changing. The Al/PCBM:ZnO/p-Si structures can be regarded as a candidate for organic diode applications. | en_US |
dc.description.sponsorship | Selcuk University BAP Office [19401034]; Hitit University BAP Office [FEF.19004.15.010, FEF01.13.003] | en_US |
dc.description.sponsorship | This study was supported by Selcuk University BAP Office under Project Number 19401034 and Hitit University BAP Office under Project Numbers FEF.19004.15.010 and FEF01.13.003. | en_US |
dc.identifier.doi | 10.1007/s12034-020-02297-y | |
dc.identifier.issn | 0250-4707 | |
dc.identifier.issn | 0973-7669 | |
dc.identifier.issue | 1 | en_US |
dc.identifier.scopus | 2-s2.0-85100549063 | en_US |
dc.identifier.scopusquality | Q3 | en_US |
dc.identifier.uri | https://doi.org/10.1007/s12034-020-02297-y | |
dc.identifier.uri | https://hdl.handle.net/20.500.12452/11326 | |
dc.identifier.volume | 44 | en_US |
dc.identifier.wos | WOS:000617476200011 | en_US |
dc.identifier.wosquality | Q4 | en_US |
dc.indekslendigikaynak | Web of Science | en_US |
dc.indekslendigikaynak | Scopus | en_US |
dc.language.iso | en | en_US |
dc.publisher | Indian Acad Sciences | en_US |
dc.relation.ispartof | Bulletin Of Materials Science | en_US |
dc.relation.publicationcategory | Makale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı | en_US |
dc.rights | info:eu-repo/semantics/closedAccess | en_US |
dc.subject | Pcbm | en_US |
dc.subject | Zno | en_US |
dc.subject | Dielectric Constant | en_US |
dc.subject | Electric Modulus | en_US |
dc.subject | Al/Pcbm:Zno/P-Si Structure | en_US |
dc.title | Dielectric characterization of Al/PCBM:ZnO/p-Si structures for wide-range frequency | en_US |
dc.type | Article | en_US |