Numerical Analysis of InGaN/GaN Intermediate Band Solar Cells Under X-sun Concentration, In-compositions, and Doping: Unlocking the Potential of Concentrated Photovoltaics
Küçük Resim Yok
Tarih
2024
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Springer Heidelberg
Erişim Hakkı
info:eu-repo/semantics/closedAccess
Özet
Our research focuses on advancing solar energy through the study of nano- and microelectronic structures. Using the finite element method, we analyze key characteristics of InGaN/GaN intermediate band solar cells (IBSC), including refractive index, absorption coefficient, short-circuit current, open-circuit voltage, fill factor, and efficiency with a focus on the X-sun concentration effect. We assess nonpolar solar cell performance at room temperature and incorporate experimental data from American Society for Testing and Materials (ASTM), encompassing AM1.5D, AM1.5G, and AM0, to analyze refractive and absorption spectra. Investigating constraints on solar cell efficiency, we find that under AM1.5G spectra, the short-circuit current is higher compared to AM1.5D and AM0. Additionally, open-circuit voltage, fill factor, and efficiency increase significantly with elevated X-sun concentration and doping. Our analysis of ASTM data indicates that InGaN-based IBSC are efficiently able to absorb the visible spectrum and withstand intense X-sun concentration, making them suitable for concentrated photovoltaic technology.
Açıklama
Anahtar Kelimeler
Cpv, Photovoltaic, Gan/Ingan, Solar Cell, Efficiency, Sun Concentration, Doping
Kaynak
Arabian Journal For Science And Engineering
WoS Q Değeri
Scopus Q Değeri
Q1
