Numerical Analysis of InGaN/GaN Intermediate Band Solar Cells Under X-sun Concentration, In-compositions, and Doping: Unlocking the Potential of Concentrated Photovoltaics

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dc.contributor.authorEl Ghazi, Haddou
dc.contributor.authorRamazan, Yasin Ecker
dc.contributor.authorEn-nadir, Redouane
dc.date.accessioned2024-02-23T14:00:08Z
dc.date.available2024-02-23T14:00:08Z
dc.date.issued2024
dc.departmentNEÜen_US
dc.description.abstractOur research focuses on advancing solar energy through the study of nano- and microelectronic structures. Using the finite element method, we analyze key characteristics of InGaN/GaN intermediate band solar cells (IBSC), including refractive index, absorption coefficient, short-circuit current, open-circuit voltage, fill factor, and efficiency with a focus on the X-sun concentration effect. We assess nonpolar solar cell performance at room temperature and incorporate experimental data from American Society for Testing and Materials (ASTM), encompassing AM1.5D, AM1.5G, and AM0, to analyze refractive and absorption spectra. Investigating constraints on solar cell efficiency, we find that under AM1.5G spectra, the short-circuit current is higher compared to AM1.5D and AM0. Additionally, open-circuit voltage, fill factor, and efficiency increase significantly with elevated X-sun concentration and doping. Our analysis of ASTM data indicates that InGaN-based IBSC are efficiently able to absorb the visible spectrum and withstand intense X-sun concentration, making them suitable for concentrated photovoltaic technology.en_US
dc.description.sponsorshipNational Center for Scientific and Technical Research (CNRST: Morocco) [CNRST/TBIdot;TAK]; Scientific and Technological Research Institution (TUBITAK: Turkey) through the bilateral project CNRST/TUBITAKen_US
dc.description.sponsorshipWe would like to express our sincere gratitude for the financial support received from the National Center for Scientific and Technical Research (CNRST: Morocco) and the Scientific and Technological Research Institution (TUBITAK: Turkey) through the bilateral project CNRST/TUBITAK for the period of 2023-2025.en_US
dc.identifier.doi10.1007/s13369-023-08645-4
dc.identifier.issn2193-567X
dc.identifier.issn2191-4281
dc.identifier.scopus2-s2.0-85183621760en_US
dc.identifier.scopusqualityQ1en_US
dc.identifier.urihttps://doi.org/10.1007/s13369-023-08645-4
dc.identifier.urihttps://hdl.handle.net/20.500.12452/11451
dc.identifier.wosWOS:001152594300003en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherSpringer Heidelbergen_US
dc.relation.ispartofArabian Journal For Science And Engineeringen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectCpven_US
dc.subjectPhotovoltaicen_US
dc.subjectGan/Inganen_US
dc.subjectSolar Cellen_US
dc.subjectEfficiencyen_US
dc.subjectSun Concentrationen_US
dc.subjectDopingen_US
dc.titleNumerical Analysis of InGaN/GaN Intermediate Band Solar Cells Under X-sun Concentration, In-compositions, and Doping: Unlocking the Potential of Concentrated Photovoltaicsen_US
dc.typeArticleen_US

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