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Öğe Indium content, doping and thickness related impacts on nonpolar (In,Ga)N solar cell performance: Numerical investigation(Pergamon-Elsevier Science Ltd, 2023) El Ghazi, Haddou; Ramazan, Yasin EckerAnalytical model to evaluate the photovoltaic performance via the short circuit current density, open circuit voltage, fill factor, and efficiency of nonpolar (In,Ga)N solar cells at room temperature is conducted via this paper. The Indium content and structure thickness including the doping concentration impacts are assessed to obtain the optimum values that yield high efficiencies. The band gap energy, reverse saturation current density, and carrier mobility are the important factors that govern how the solar cell performance characteristics change with the adjusted parameters. The solar cell characteristics are calculated for American Society for testing and Materials experimental data related to 1-sun AM1.5D, AM1.5G, and AM0 spectra. A high quality In0.42Ga0.58N (1.42eV) solar cell with a 3 mu m thickness, 10(17)cm(- 3) doping concentration and reflection coefficient of about 15% can display as optimum efficiency as 25.43%, 25.16% and 22.87% under respectively 1-sun AM1.5G, AM1.5D and AM0 illuminations. The optimum AM1.5G related photovoltaic conversion efficiency is reached for FF = 89.2%, V-oc = 1.12V and Jsc = 28.63 mA.cm(-2).Öğe Numerical Analysis of InGaN/GaN Intermediate Band Solar Cells Under X-sun Concentration, In-compositions, and Doping: Unlocking the Potential of Concentrated Photovoltaics(Springer Heidelberg, 2024) El Ghazi, Haddou; Ramazan, Yasin Ecker; En-nadir, RedouaneOur research focuses on advancing solar energy through the study of nano- and microelectronic structures. Using the finite element method, we analyze key characteristics of InGaN/GaN intermediate band solar cells (IBSC), including refractive index, absorption coefficient, short-circuit current, open-circuit voltage, fill factor, and efficiency with a focus on the X-sun concentration effect. We assess nonpolar solar cell performance at room temperature and incorporate experimental data from American Society for Testing and Materials (ASTM), encompassing AM1.5D, AM1.5G, and AM0, to analyze refractive and absorption spectra. Investigating constraints on solar cell efficiency, we find that under AM1.5G spectra, the short-circuit current is higher compared to AM1.5D and AM0. Additionally, open-circuit voltage, fill factor, and efficiency increase significantly with elevated X-sun concentration and doping. Our analysis of ASTM data indicates that InGaN-based IBSC are efficiently able to absorb the visible spectrum and withstand intense X-sun concentration, making them suitable for concentrated photovoltaic technology.