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Öğe Boosting the efficiency of Cu2ZnSnS4 solar cells with VO2 phase transition photonic crystal(Elsevier, 2023) Basyooni, Mohamed A.; Houimi, Amina; Tihtih, Mohammed; Zaki, Shrouk E.; Boukhoubza, Issam; Belaid, Walid; En-nadir, RedouanePhotonic crystal (PhC) has been studied for their potential to improve the efficiency of Cu2ZnSnS4 solar cells by increasing the generated photocurrent by integrating it as a back reflector with almost zero transmission through the absorption active zone of the solar cell. It was found that the thickness of PhC layers greatly affects the width of the photonic bandgap and that increasing the thickness of VO2 causes it to shift to a higher wavelength range. The PhC layers were added at the back side of the solar cell in two different configurations: (Monoclinic (M) VO2/TiO2) and (Tetragonal (T) VO2/TiO2) via SCAPS model. The study found that the (M VO2/TiO2) configuration led to an enhancement of the device's efficiency from 11.02 to 12.79%, while the (T VO2/TiO2) reaches 16.88%. The study concluded that the PhC layers enhance the light-matter coupling and photonic coupling and improvement in the device's performance.Öğe Effect of in-/ex-situ annealing temperature on the optical, structural and gas sensing dynamics of CdS nanostructured thin films(Academic Press Ltd- Elsevier Science Ltd, 2020) Gormez, Arife Efe; Basyooni, Mohamed A.; Zaki, Shrouk E.; Eker, Yasin Ramazan; Sonmez, Erdal; Yilmaz, MucahitEffect of in-/ex-situ annealing on the structure, optical, photoluminescence, electrical characterization and gas sensing dynamics on CdS thin films are presented. Raman characterizations showed an increase in the peak intensity with increasing the annealing temperature under ex-situ, while a lower peak intensity observed through the in-situ annealing condition. No shift was observed in the Photoluminescence peaks through the yellow band peaks of in-situ annealed samples, however, a slightly blue shift was observed through the ex-situ annealed samples. High conductivity was observed for all samples, while in the case of in-situ RT, in-situ 100 degrees C, ex-situ 200 degrees C and ex-situ 300 degrees C, a CO2 and O-2 gas sensing activity have been tested. The ex-situ 300 degrees C sample shows a higher response towards CO2 compared with the ex-situ 200 degrees C film. While, both in-situ RT and 100 degrees C sensors show the same response towards CO2 with a high gas response. However, the in-situ 100 degrees C sensor has the highest response compared to in-situ RT film with a high response of 25% at 50 sccm towards O-2.Öğe Efficient MoWO3/VO2/MoS2/Si UV Schottky photodetectors; MoS2 optimization and monoclinic VO2 surface modifications(Nature Portfolio, 2020) Basyooni, Mohamed A.; Zaki, Shrouk E.; Shaban, Mohamed; Eker, Yasin Ramazan; Yilmaz, MucahitThe distinctive properties of strongly correlated oxides provide a variety of possibilities for modulating the properties of 2D transition metal dichalcogenides semiconductors; which represent a new class of superior optical and optoelectronic interfacing semiconductors. We report a novel approach to scaling-up molybdenum disulfide (MoS2) by combining the techniques of chemical and physical vapor deposition (CVD and PVD) and interfacing with a thin layer of monoclinic VO2. MoWO3/VO2/MoS2 photodetectors were manufactured at different sputtering times by depositing molybdenum oxide layers using a PVD technique on p-type silicon substrates followed by a sulphurization process in the CVD chamber. The high quality and the excellent structural and absorption properties of MoWO3/VO2/MoS2/Si with MoS2 deposited for 60 s enables its use as an efficient UV photodetector. The electronically coupled monoclinic VO2 layer on MoS2/Si causes a redshift and intensive MoS2 Raman peaks. Interestingly, the incorporation of VO2 dramatically changes the ratio between A-exciton (ground state exciton) and trion photoluminescence intensities of VO2/(30 s)MoS2/Si from < 1 to > 1. By increasing the deposition time of MoS2 from 60 to 180 s, the relative intensity of the B-exciton/Aexciton increases, whereas the lowest ratio at deposition time of 60 s refers to the high quality and low defect densities of the VO2/(60 s)MoS2/Si structure. Both the VO2/(60 s)MoS2/Si trion and A-exciton peaks have higher intensities compared with (60 s) MoS2/Si structure. The MoWO3/VO2/(60 s) MoS2/Si photodetector displays the highest photocurrent gain of 1.6, 4.32 x 10(8) Jones detectivity, and similar to 1.0 x 10(10) quantum efficiency at 365 nm. Moreover, the surface roughness and grains mapping are studied and a low semiconducting-metallic phase transition is observed at similar to 40 degrees C.Öğe Fast optoelectronic gas sensing with p-type V2O5/WS2/Si heterojunction thin film(Elsevier Science Sa, 2023) Basyooni, Mohamed A.; Zaki, Shrouk E.; Eker, Yasin RamazanThe efficiency of ultraviolet (UV) illumination in gas adsorption/desorption is remarkable due to its capacity to activate and energize CO2 molecules, rendering them more reactive and prone to surface interactions. A heterojunction device for room-temperature optoelectronic gas sensing has been fabricated. This was achieved through the deposition of an orthorhombic vanadium pentoxide (V2O5) thin film onto a wafer scale 2D p-type tungsten disulfide (WS2)/silicon (Si). The incorporation of the V2O5 layer brings about alterations in WS2's electronic properties, resulting in increased energy states for photo-generated carriers and a promising approach to enhance the intensity of exciton and trion peaks. Specifically, the WS2 film exhibits a carrier concentration of 3.67 x 1018 cm-3, while incorporating the V2O5 layer significantly raises this concentration to 1.20 x 1020 cm-3. The experiments reveal a rapid response time of 0.4 s and a recovery time of 0.2 s, respectively, demonstrating the swift desorption capability of the device in a CO2 environment. Remarkably, this device exhibits high optoelectronic performances, boasting a detectivity of 1.22 x 1013 Jones and a responsivity of 177.21 A/W. These findings have the potential to advance the development of improved gas-sensing devices, offering heightened sensitivity and selectivity in diverse optoelectronic applications.Öğe Fast response of CO2 room temperature gas sensor based on Mixed-Valence Phases in Molybdenum and Tungsten Oxide nanostructured thin films(Elsevier Sci Ltd, 2020) Basyooni, Mohamed A.; Zaki, Shrouk E.; Ertugrul, Sezin; Yilmaz, Mucahit; Eker, Yasin RamazanMolybdenum - tungsten oxide (Mo1-xWxO3, x = 1, 0.8, and 0.6) nanostructured thin films-based room temperture (RT) gas sensors are prepared by means of reactive RF magnetron co-sputtering at 400 degrees C. The structural, morphology, topography, optical, and electrical characterizations of the prepared sensors are carried out by XRD Rietveld structure refinement analyses, SEM, AFM, UV-VIS spectrophotometer, and source meter. By controlling the deposition temperture of 400 degrees C, a co-existing phase of MoO3 and MoO2 in WO3 matrix is presented with high oxygen vacancies concentration as calculated from the XRD Rietveld Refinement analyses. By increasing the Mo content, the calculated oxygen vacancies concentration increases by factor of 1.36. The optical characterization of Mo0.2W0.6O3 thin film shows a high transparent of 99.6% at 500 nm. The prepared thin films have successfully tested to detect carbon dioxide (CO2) at RT (20 degrees C) with high selectivity and repeatability. The Mo0.4W0.6O3 sensor film shows an electrical Schottky contact with fast response and recovery times towards CO2 under UV light activation. Mo0.4W0.6O3 thin film under dark and UV conditions were able to detect low CO2 concentration of 2 and 0.5 sccm CO2 M RT, respectively. Under UV illumination, Mo0.4W0.6O3 film shows a fast response and recovery time of 6.53 and 8.05 sat 0.5 sccm with sensitivity of 29.19%. Under UV photonic activation, higher electron concentration is presented in the oxide surface, which leads to high probability for reaction with CO2 molecules, and consequently enhanced the chemisorption of CO2. The enhanced CO2 gas sensitivity and fast response may refer to the high oxygen vacancies concentration and the active role of the grain boundaries in MoO2, MoO3 and WO3 mixed-valence nanostructured under UV activation.Öğe High-Performance Negative Self-Powered ?-MoO3/Ir/?-MoO3 Photodetectors: Probing the Influence of Coulomb Deep Traps(Amer Chemical Soc, 2023) Basyooni, Mohamed A.; Tihtih, Mohammed; Zaki, Shrouk E.; Eker, Yasin RamazanNanostructures of ultrathin 2D MoO3 semiconductors have gained significant attention in the field of transparent optoelectronics and nanophotonics due to their exceptional responsiveness. In this study, we investigate self-powered alpha-MoO3/Ir/alpha-MoO3 photodetectors, focusing on the influence of induced hot electrons in ultrathin alpha-MoO3 when combined with an ultrathin Ir plasmonic layer. Our results reveal the presence of both positive and negative photoconductivity at a 0 V bias voltage. Notably, by integrating a 2 nm Ir layer between post-annealed alpha-MoO3 films, we achieve remarkable performance metrics, including a high I-ON/I-OFF ratio of 3.8 x 10(6), external quantum efficiency of 132, and detectivity of 3.4 x 10(11) Jones at 0 V bias. Furthermore, the response time is impressively short, with only 0.2 ms, supported by an exceptionally low MoO3 surface roughness of 0.1 nm. The observed negative photoresponse is attributed to O-2 desorption from the MoO3 surface, resulting in increased carrier density and reduced mobility in the Ir layer due to Coulomb trapping and oxygen vacancy deep levels. Consequently, this leads to a decreased carrier mobility and diminished current in the heterostructure. Our findings underscore the enormous potential of ultrathin MoO3 semiconductors for high-performance negative conductivity optoelectronics and photonic applications.Öğe Nanostructured MoS2 and WS2 Photoresponses under Gas Stimuli(Mdpi, 2022) Basyooni, Mohamed A.; Zaki, Shrouk E.; Alfryyan, Nada; Tihtih, Mohammed; Eker, Yasin Ramazan; Attia, Gamal F.; Yilmaz, MucahitThis study was on the optoelectronic properties of multilayered two-dimensional MoS2 and WS2 materials on a silicon substrate using sputtering physical vapor deposition (PVD) and chemical vapor deposition (CVD) techniques. For the first time, we report ultraviolet (UV) photoresponses under air, CO2, and O-2 environments at different flow rates. The electrical Hall effect measurement showed the existence of MoS2 (n-type)/Si (p-type) and WS2 (P-type)/Si (p-type) heterojunctions with a higher sheet carrier concentration of 5.50 x 10(5) cm(-2) for WS2 thin film. The IV electrical results revealed that WS2 is more reactive than MoS2 film under different gas stimuli. WS2 film showed high stability under different bias voltages, even at zero bias voltage, due to the noticeably good carrier mobility of 29.8 x 10(2) cm(2)/V. WS2 film indicated a fast rise/decay time of 0.23/0.21 s under air while a faster response of 0.190/0.10 s under a CO2 environment was observed. Additionally, the external quantum efficiency of WS2 revealed a remarkable enhancement in the CO2 environment of 1.62 x 10(8) compared to MoS2 film with 6.74 x 10(6). According to our findings, the presence of CO2 on the surface of WS2 improves such optoelectronic properties as photocurrent gain, photoresponsivity, external quantum efficiency, and detectivity. These results indicate potential applications of WS2 as a photodetector under gas stimuli for future optoelectronic applications.Öğe Negative Photoconductivity in 2D ?-MoO3/Ir Self-Powered Photodetector: Impact of Post-Annealing(Mdpi, 2023) Basyooni-M. Kabatas, Mohamed A.; Zaki, Shrouk E.; Rahmani, Khalid; En-nadir, Redouane; Eker, Yasin RamazanSurface plasmon technology is regarded as having significant potential for the enhancement of the performance of 2D oxide semiconductors, especially in terms of improving the light absorption of 2D MoO3 photodetectors. An ultrathin MoO3/Ir/SiO2/Si heterojunction Schottky self-powered photodetector is introduced here to showcase positive photoconductivity. In wafer-scale production, the initial un-annealed Mo/2 nm Ir/SiO2/Si sample displays a sheet carrier concentration of 5.76 x 10(11)/cm(2), which subsequently increases to 6.74 x 10(12)/cm(2) after annealing treatment, showing a negative photoconductivity behavior at a 0 V bias voltage. This suggests that annealing enhances the diffusion of Ir into the MoO3 layer, resulting in an increased phonon scattering probability and, consequently, an extension of the negative photoconductivity behavior. This underscores the significance of negative photoconductive devices in the realm of optoelectronic applications.Öğe Novel highly-sensitive heavy metals sensor-based 1D phononic crystal for NiCl2 detection(Springer, 2022) Zaki, Shrouk E.; Mehaney, Ahmed; Aly, Arafa H.In this work, we introduced a one-dimensional defective phononic crystal as a novel heavy metal sensor based on the appearance of the resonance peaks inside the phononic band gap for detecting NiCl2 concentrations in water. Our designed 1D-DPhC heavy metal sensor has a defect layer filled with different concentrations of NiCl2 at room temperature. A novel sensitivity, quality factor, and figure of merit values have been observed based on the resonance peaks that appeared in the proposed sensor bandgap for NiCl2 concentrations. Also, for all NiCl2 concentrations, a relationship between sensitivity and resonance frequency was introduced. Our 1D-DPhC heavy metal sensor recorded the highest sensitivity value of 3.531 (kHz/(kg/m(3))) for concentration of 1.046 mol/kg. On the other hand, the lowest sensitivity value of 1.043 (kHz/(kg/m(3))) was introduced for the concentration of 0.2075 mol/kg. Moreover, the highest quality factor value of 5.977 x10(10) was observed for the concentration of 0.2075 mol/kg.Öğe Observation of negative photoresponse in joule-heated Au/Cu2SnS3 ternary chalcogenide thin film deposited by low energy pulsed laser deposition(Elsevier, 2022) Basyooni, Mohamed A.; Belaid, Walid; Houimi, Amina; Zaki, Shrouk E.; Eker, Yasin Ramazan; Gezgin, Serap Yigit; Kilic, Hamdi SukurGold (Au) nanoparticles trapped within Cu2SnS3 (CTS) thin films were effectively deposited on a low-cost glass substrate using a simple pulsed laser deposition of 15 mJ for 5 ns at a 10 Hz repetition rate. The film's structural, morphological, topography, optical, and optoelectronic properties were investigated. Highly crystalline ternary chalcogenide CTS with tetragonal symmetry and 17 nm grain size is prepared. The 110 0 resistivity of the thin film increases up to 125 0 indicating a negative photoresponse under visible light excitation. The decrease in the photocurrent is also observed with Cu2SnS3/Au/Cu2SnS3 sandwich ternary chalcogenide structure at resistivities values from 31 to 35 0 and a Joule effect influence the presence of plasmonic Au nanoparticle interlayers involved a lower phonon disorder given a higher photoresponse effect as predicted from Urbach energy.Öğe Photonic bandgap engineering in (VO2) n /(WSe2) n photonic superlattice for versatile near- and mid-infrared phase transition applications(Iop Publishing Ltd, 2022) Basyooni, Mohamed A.; Zaki, Shrouk E.; Tihtih, Mohammed; Eker, Yasin Ramazan; Ates, SuleThe application of the photonic superlattice in advanced photonics has become a demanding field, especially for two-dimensional and strongly correlated oxides. Because it experiences an abrupt metal-insulator transition near ambient temperature, where the electrical resistivity varies by orders of magnitude, vanadium oxide (VO2) shows potential as a building block for infrared switching and sensing devices. We reported a first principle study of superlattice structures of VO2 as a strongly correlated phase transition material and tungsten diselenide (WSe2) as a two-dimensional transition metal dichalcogenide layer. Based on first-principles calculations, we exploit the effect of semiconductor monoclinic and metallic tetragonal state of VO2 with WSe2 in a photonic superlattices structure through the near and mid-infrared (NIR-MIR) thermochromic phase transition regions. By increasing the thickness of the VO2 layer, the photonic bandgap (PhB) gets red-shifted. We observed linear dependence of the PhB width on the VO2 thickness. For the monoclinic case of VO2, the number of the forbidden bands increase with the number of layers of WSe2. New forbidden gaps are preferred to appear at a slight angle of incidence, and the wider one can predominate at larger angles. We presented an efficient way to control the flow of the NIR-MIR in both summer and winter environments for phase transition and photonic thermochromic applications. This study's findings may help understand vanadium oxide's role in tunable photonic superlattice for infrared switchable devices and optical filters.Öğe Role of oxygen vacancies in vanadium oxide and oxygen functional groups in graphene oxide for room temperature CO2 gas sensors(Elsevier Science Sa, 2019) Zaki, Shrouk E.; Basyooni, Mohamed A.; Shaban, Mohamed; Rabia, Mohamed; Eker, Yasin Ramazan; Attia, Gamal F.; Yilmaz, MucahitThe greenhouse effect is involving global heating and climate change within the world. Carbon dioxide (CO2) is one of the major gas at the origin of this effect, but also the byproduct of human activity. Therefore, monitoring the indoor/outdoor CO2 emission by gas sensors is one of the priorities for environmental preservation. In this paper, the sensing performance of CO2 towards two different O-rich films have been studied; graphene oxide (GO) and vanadium dioxide (VO2). The preparation of GO film has been carried out by spray pyrolysis on fluorine tin oxide (FTO) prepared by the modified Hummers method. While the VO2 film has been sol-gel spin-coated on a glass substrate. Both films have been characterized using XRD, SEM and electrical properties. The CO2 gas sensing mechanism and the role of oxygen vacancies in VO2 are addressing. The oxygen functional groups in GO play a main role in the CO2 gas the sensitivity level and response time. Their gas sensing performances have been investigated based on measuring the response vs recovery time, dynamic response curve analysis and sensitivity. In order to better understand the sensing mechanism, characterization has been done with different gas concentrations. Both GO and VO2 based CO2-sensors are acted as an n-type sensor. Sensing behavior of GO at RT has explained to be mainly mediated by the oxygen functional groups and a wide range of active sites. In the other hand, VO2 contains oxygen vacancies and more defect sites which play a main role in the RT sensing activity and low recovery time. (C) 2019 Elsevier B.V. All rights reserved.Öğe Self-Powered UV Photodetector Utilizing Plasmonic Hot Carriers in 2D ?-MoO3/Ir/Si Schottky Heterojunction Devices(Wiley-V C H Verlag Gmbh, 2024) Basyooni, Mohamed A.; Zaki, Shrouk E.; Tihtih, Mohammed; Boukhoubza, Issam; En-nadir, Redouane; Derkaoui, Issam; Attia, Gamal F.Self-powered UV sensing has enormous potential in military and civilian applications. However, achieving high responsivity and fast response/recovery time presents significant challenges. Self-powered photodetectors (PDs) have several advantages over traditional PDs, including higher sensitivity, lower power consumption, and simpler design. This study introduces a breakthrough self-powered PD that uses a Schottky junction of 2D alpha-MoO3/iridium (Ir)/Si ultrathin film to detect 365 nm light at 0 V bias through using atomic layer deposition (ALD) and sputtering systems. The PD response is enhanced by plasmonic Ir-induced hot carriers, enabling detection in a mere 0.1 ms. Incorporating a 4 nm Ir layer boosts the responsivity from 0 to 34 A W-1, and the external quantum efficiency is elevated from 0 to 7E11 under 365 nm light illumination. It also has a high I-ON/I-OFF ratio of 11.22E4 at 0 V. These results make the MoO3/4 nm Ir/Si structure an interesting option for self-powered PDs with high efficiency, and the use of a simple ALD system for large-scale fabrication of 2D alpha-MoO3 on hot carrier Ir plasmonic layer. The findings of this research hold tremendous promise in the field of UV sensing and can lead to exciting developments in military and civilian technology.Öğe A theoretical study of the effects of electric field, hydrostatic pressure, and temperature on photoionization cross-section of a donor impurity in (Al, Ga)N/AlN double triangular quantum wells(Iop Publishing Ltd, 2023) Belaid, Walid; El Ghazi, Haddou; Zaki, Shrouk E.; Basyooni, Mohamed A.; Tihtih, Mohammed; Ennadir, Redouane; Kilic, Hamdi SukurThe aim of this research is to analyze the influence of various factors on the photo-ionization cross-section in (Al, Ga)N/AlN double triangular quantum wells. Using the finite difference method, the effects of the electric field, hydrostatic pressure, temperature, and Ga concentration were investigated within the effective mass and parabolic approximations. Our findings show that the photo-ionization cross-section (PICS) is highly dependent on all the variables under consideration. The optical spectra were blue-shifted with increasing electric field and pressure and red-shifted with increasing temperature and impurity displacement far from the center of the structure. Furthermore, it was found that changes in gallium content and impurity position can increase the PICS amplitude. A comparison of the obtained results with the existing literature as a limiting case of the reported problem is also provided, and excellent agreement is found.Öğe Thermionic Emission of Atomic Layer Deposited MoO3/Si UV Photodetectors(Mdpi, 2023) Basyooni, Mohamed A.; Gaballah, A. E. H.; Tihtih, Mohammed; Derkaoui, Issam; Zaki, Shrouk E.; Eker, Yasin Ramazan; Ates, SuleUltrathin MoO3 semiconductor nanostructures have garnered significant interest as a promising nanomaterial for transparent nano- and optoelectronics, owing to their exceptional reactivity. Due to the shortage of knowledge about the electronic and optoelectronic properties of MoO3/n-Si via an ALD system of few nanometers, we utilized the preparation of an ultrathin MoO3 film at temperatures of 100, 150, 200, and 250 degrees C. The effect of the depositing temperatures on using bis(tbutylimido)bis(dimethylamino)molybdenum (VI) as a molybdenum source for highly stable UV photodetectors were reported. The ON-OFF and the photodetector dynamic behaviors of these samples under different applied voltages of 0, 0.5, 1, 2, 3, 4, and 5 V were collected. This study shows that the ultrasmooth and homogenous films of less than a 0.30 nm roughness deposited at 200 degrees C were used efficiently for high-performance UV photodetector behaviors with a high sheet carrier concentration of 7.6 x 10(10) cm(-2) and external quantum efficiency of 1.72 x 10(11). The electronic parameters were analyzed based on thermionic emission theory, where Cheung and Nord's methods were utilized to determine the photodetector electronic parameters, such as the ideality factor (n), barrier height (f(0)), and series resistance (R-s). The n-factor values were higher in the low voltage region of the I-V diagram, potentially due to series resistance causing a voltage drop across the interfacial thin film and charge accumulation at the interface states between the MoO3 and Si surfaces.Öğe Tuning the Metal-Insulator Transition Properties of VO2 Thin Films with the Synergetic Combination of Oxygen Vacancies, Strain Engineering, and Tungsten Doping(Mdpi, 2022) Basyooni, Mohamed A.; Al-Dossari, Mawaheb; Zaki, Shrouk E.; Eker, Yasin Ramazan; Yilmaz, Mucahit; Shaban, MohamedVanadium oxide (VO2) is considered a Peierls-Mott insulator with a metal-insulator transition (MIT) at T-c = 68 degrees C. The tuning of MIT parameters is a crucial point to use VO2 within thermoelectric, electrochromic, or thermochromic applications. In this study, the effect of oxygen deficiencies, strain engineering, and metal tungsten doping are combined to tune the MIT with a low phase transition of 20 degrees C in the air without capsulation. Narrow hysteresis phase transition devices based on multilayer VO2, WO3, Mo0.2W0.8O3, and/or MoO3 oxide thin films deposited through a high vacuum sputtering are investigated. The deposited films are structurally, chemically, electrically, and optically characterized. Different conductivity behaviour was observed, with the highest value towards VO1.75/WO2.94 and the lowest VO1.75 on FTO glass. VO1.75/WO2.94 showed a narrow hysteresis curve with a single-phase transition. Thanks to the role of oxygen vacancies, the MIT temperature decreased to 35 degrees C, while the lowest value (T-c = 20 degrees C) was reached with Mo0.2W0.8O3/VO2/MoO3 structure. In this former sample, Mo0.2W0.8O3 was used for the first time as an anti-reflective and anti-oxidative layer. The results showed that the MoO3 bottom layer is more suitable than WO3 to enhance the electrical properties of VO2 thin films. This work is applied to fast phase transition devices.Öğe Ultra-sensitive gas sensor based fano resonance modes in periodic and fibonacci quasi-periodic Pt/PtS2 structures(Nature Portfolio, 2022) Zaki, Shrouk E.; Basyooni, Mohamed A.Ultra-sensitive greenhouse gas sensors for CO2, N2O, and CH4 gases based on Fano resonance modes have been observed through periodic and quasi-periodic phononic crystal structures. We introduced a novel composite based on metal/2D transition metal dichalcogenides (TMDs), namely; platinum/platinum disulfide (Pt/PtS2) composite materials. Our gas sensors were built based on the periodic and quasi-periodic phononic crystal structures of simple Fibonacci (F(5)) and generalized Fibonacci (FC(7, 1)) quasi-periodic phononic crystal structures. The FC(7, 1) structure represented the highest sensitivity for CO2, N2O, and CH4 gases compared to periodic and F(5) phononic crystal structures. Moreover, very sharp Fano resonance modes were observed for the first time in the investigated gas sensor structures, resulting in high Fano resonance frequency, novel sensitivity, quality factor, and figure of merit values for all gases. The FC(7, 1) quasi-periodic structure introduced the best layer sequences for ultra-sensitive phononic crystal greenhouse gas sensors. The highest sensitivity was introduced by FC(7, 1) quasiperiodic structure for the CH4 with a value of 2.059 (GHz/m.s(-1)). Further, the temperature effect on the position of Fano resonance modes introduced by FC(7, 1) quasi-periodic PhC gas sensor towards CH4 gas has been introduced in detail. The results show the highest sensitivity at 70 degrees C with a value of 13.3 (GHz/degrees C). Moreover, the highest Q and FOM recorded towards CH4 have values of 7809 and 78.1 (m.s(-1))(-1) respectively at 100 degrees C.
